|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
2SB035030MLJY 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION O 2SB035030MLJY is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; O O O O O Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; O Chip Size:350m X 350m; Chip Thickness: 15520m Chip Topography and Dimensions La: Chip Size: 350m; Lb: Pad Size: 300m; ORDERING SPECIFICATIONS Product Name 2SB035030MLJY Specification For Au and AlSi wire bonding package O ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 30 200 1 125 -40~125 Unit V mA A C C ELECTRICAL CHARACTERISTICS (Tamb=25C) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR Test Conditions IR=0.1mA IF=200mA VR=10V Min. 30 --Max. -0.50 30 Unit V V A HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.09.18 Page 1 of 1 |
Price & Availability of 2SB035030MLJY |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |